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vishay siliconix dg611a, dg612a, dg613a document number: 69904 s11-1066-rev. c, 30-may-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 1 pc charge injection, 100 pa leakage, quad spst switches description the dg611a, dg612a and dg613a contain four independently selectable spst switches. they offer improved performance over the industry standard dg611 series. the dg611a and dg612a have all switches normally closed and normally open respectively, while the dg613a has 2 normally open and 2 normally closed switches. they are designed to operate from a 2.7 v to 12 v single supply or from 2.7 v to 5 v dual supplies and are fully specified at + 3 v, + 5 v and 5 v. all control logic inputs have guaranteed 2 v logic high limits when operating from + 5 v or 5 v supplies and 1.4 v when operating from a + 3 v supply. the dg611a, dg612a and dg613a switches conduct equally well in both directions and offer rail to rail analog signal handling. 1 pc low charge injection, coupled with very low switch capacitance: 2 pf, fast switching speed: t on /t off 27 ns/16 ns and excellent 3 db bandwidth: 720 mhz, make these products ideal for precision in strumentation, high-end data acquisition, automated test equipment and high speed communication applications. operation temperature is specified from - 40 c to + 125 c. the dg611a, dg612a and dg613a are available in 16 lead soic, tssop and the space saving 1.8 mm x 2.6 mm miniqfn packages. features ? halogen-free according to iec 61249-2-21 definition ? low charge injection (1 pc typ.) ? leakage current < 0.25 na at 85 c ? low switch capacitance (c soff 2 pf typ.) ? low r ds(on) - 115 ? max. ? fully specified with single supply operation at 3 v, 5 v and dual supplies at 5 v ? low voltage, 2.5 v cmos/ttl compatible ? 720 mhz, 3 db bandwidth ? excellent isolation performance (62 db at 10 mhz) ? excellent crosstalk perf ormance (90 db at 10 mhz) ? fully specified from - 40 c to + 85 c and - 40 c to + 125 c ? 16 lead soic, tssop and miniqfn package (1.8 mm x 2.6 mm) ? compliant to rohs directive 2002/95/ec applications ? precision instrumentation ? medical instrumentation ? automated test equipment ? high speed communications applications ? high-end data acquisition ? sample and hold applications ? sample and hold systems functional block diagram and pin configuration truth table logic dg611a dg612a 0onoff 1offon dg611a soic/tssop top v ie w s 2 v + n c s 3 i n 3 d 3 d 4 i n 4 i n 2 d 2 d 1 i n 1 s 1 v - g n d s 4 1 2 3 4 5 6 8 7 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top v ie w i n 1 i n 2 d 1 d 2 s 1 s 2 v - v + g n d n c s 4 s 3 d 4 d 3 i n 4 i n 3 dg611a miniqfn pin 1 de v ice marking: kxx for dg611a (miniqf n 16) lxx for dg612a pxx for dg613a xx = date/lot tracea b ility code kxx
www.vishay.com 2 document number: 69904 s11-1066-rev. c, 30-may-11 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 functional block diagram and pin configuration notes: a. - 40 c to 85 c datasheet limits apply. truth table logic sw 1 , sw 4 sw 2 , sw 3 0offon 1onoff ordering information temp. range package part number dg611a, dg612a, dg613a - 40 c to 125 c a 16-pin tssop dg611aeq-t1-e3 dg612aeq-t1-e3 dg613aeq-t1-e3 16-pin narrow soic dg611aey-t1-e3 dg612aey-t1-e3 dg613aey-t1-e3 16-pin miniqfn dg611aen-t1-e4 dg612aen-t1-e4 dg613aen-t1-e4 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 to p v ie w i n 1 i n 2 d 1 d 2 s 1 s 2 v - v + g n d n c s 4 s 3 d 4 d 3 i n 4 i n 3 to p v ie w s 2 v + n c s 3 i n 3 d 3 d 4 i n 4 i n 2 d 2 d 1 i n 1 s 1 v - g n d s 4 1 2 3 4 5 6 8 7 16 15 14 13 12 11 10 9 dg613a soic/tssop dg613a miniqfn pin 1 de v ice marking: pxx for dg613a (miniqf n 16) pxx
document number: 69904 s11-1066-rev. c, 30-may-11 www.vishay.com 3 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. signals on sx, dx, or inx exceeding v + or v - will be clamped by internal diodes. limit forward diode current to maximum cur rent ratings. b. all leads welded or soldered to pc board. c. derate 5.6 mw/c above 70 c. d. derate 6.6 mw/c above 70 c. e. derate 8 mw/c above 70 c. f. manual soldering with iron is not recommended for leadless co mponents. the miniqfn-16 is a leadless package. the end of the l ead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper l ip cannot be guaranteed and is not required to ensure adequa te bottom side solder interconnection. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit v + to v - 14 v gnd to v - 7 digital inputs a , v s , v d (v -) - 0.3 v to (v +) + 0.3 v or 30 ma, whichever occurs first continuous current (any terminal) 30 ma peak current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature - 65 to 150 c power dissipation (package) b 16-pin tssop c 450 mw 16-pin miniqfn d 525 16-pin narrow soic e 640 thermal resistance (package) b 16-pin tssop 178 c/w 16-pin miniqfn 152 16-pin narrow soic 125
www.vishay.com 4 document number: 69904 s11-1066-rev. c, 30-may-11 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications for dual supplies (v + = + 5 v, v - = - 5 v) parameter symbol test conditions unless otherwise specified v + = + 5 v, v - = - 5 v v in = 2 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full - 55- 55v on-resistance r on i s = 1 ma, v d = - 3 v, 0 v, + 3 v room full 72 115 160 115 140 ? on-resistance match ? r on i s = 1 ma, v d = 3 v room full 0.7 4 6.5 4 5.5 on-resistance flatness r flatness i s = 1 ma, v d = - 3 v, 0 v, + 3 v room full 25 40 60 40 55 switch off leakage current i s(off) v + = 5.5 v, v - = - 5.5 v v d = + 4.5 v/- 4.5 v v s = - 4.5 v/+ 4.5 v room full 0.02 - 0.1 - 2 0.1 2 - 0.1 - 0.25 0.1 0.25 na i d(off) room full 0.02 - 0.1 - 2 0.1 2 - 0.1 - 0.25 0.1 0.25 switch on leakage current i d(on) v + = 5.5 v, v - = - 5.5 v v d = v s = 4.5 v room full 0.02 - 0.1 - 6 0.1 6 - 0.1 - 0.25 0.1 0.25 digital control input current, v in low i il v in under test = 0.8 v full 0.005 - 0.1 0.1 - 0.1 0.1 a input current, v in high i ih v in under test = 2 v full 0.005 - 0.1 0.1 - 0.1 0.1 input capacitance e c in f = 1 mhz room 2 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 3 v, see figure 1 room full 27 55 90 55 75 ns turn-off time t off room full 16 35 50 35 45 break-before-make time delay t bbm dg613a only, v s = 3 v r l = 300 ? , c l = 35 pf room full 15 22 charge injection e q v g = 0 v, r g = 0 ? , c l = 1 nf room 1 pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 10 mhz room - 62 db channel-to-channel crosstalk e x ta l k room - 90 3 db bandwidth e bw r l = 50 ? , c l = 5 pf room 720 mhz source off capacitance e c s(off) f = 1 mhz; v s = 0 v room 2 pf drain off capacitance e c d(off) room 3 drain on capacitance e c d(on) f = 1 mhz; v s = v d = 0 v room 9 total harmonic distortion e thd signal = 1 v rms , 20 hz to 20 khz, r l = 600 ? room 0.01 % power supplies power supply current i+ v + = + 5 v, v - = - 5 v v in = 0 v or 5 v room full 0.001 0.1 1 0.1 1 a negative supply current i- room full - 0.001 - 0.1 - 1 - 0.1 - 1 ground current i gnd room full - 0.001 - 0.1 - 1 - 0.1 - 1
document number: 69904 s11-1066-rev. c, 30-may-11 www.vishay.com 5 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications for unipolar supplies (v + = + 5 v, v - = 0 v) parameter symbol test conditions unless otherwise specified v + = + 5 v, v - = 0 v v in = 2 v, 0.8 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0505v on-resistance r on v + = + 5 v, v - = 0 v i s = 1 ma, v d = + 3.5 v room full 139 180 235 180 215 ? on-resistance match ? r on v + = + 5 v, v - = 0 v, i s = 1 ma, v d = + 3.5 v room full 16 10 6 9 on-resistance flatness r flatness v + = + 5 v, v - = 0 v, i s = 1 ma, v d = 0 v, + 3.5 v room full 56 80 120 80 110 switch off leakage current i s(off) v + = 5.5 v, v - = 0 v v d = 4.5 v/1 v v s = 1 v/4.5 v room full 0.02 - 0.1 - 2 0.1 2 - 0.1 - 0.25 0.1 0.25 na i d(off) room full 0.02 - 0.1 - 2 0.1 2 - 0.1 - 0.25 0.1 0.25 switch on leakage current i d(on) v + = 5.5 v, v - = 0 v v d = v s = 1 v/4.5 v room full 0.02 - 0.1 - 6 0.1 6 - 0.1 - 0.25 0.1 0.25 digital control input current, v in low i il v in under test = 0.8 v full 0.005 - 0.1 0.1 - 0.1 0.1 a input current, v in high i ih v in under test = 2 v full 0.005 - 0.1 0.1 - 0.1 0.1 input capacitance e c in f = 1 mhz room 2 pf dynamic characteristics tu r n - o n t i m e e t on r l = 300 ? , c l = 35 pf v s = 3 v, see figure 1 room full 33 60 100 60 90 ns turn-off time e t off room full 16 35 50 35 45 break-before-make e time delay t bbm dg613a only, v s = 3 v r l = 300 ? , c l = 35 pf room full 19 22 charge injection e q v g = 0 v, r g = 0 ? , c l = 1 nf full 2.3 pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 10 mhz room - 61 db channel-to-channel crosstalk e x ta l k room - 90 3 db bandwidth e bw r l = 50 ? , c l = 5 pf room 675 mhz source off capacitance e c s(off) f = 1 mhz; v s = 0 v room 3 pf drain off capacitance e c d(off) room 5 drain on capacitance e c d(on) f = 1 mhz; v s = v d = 0 v room 9 power supplies power supply current i+ v in = 0 v or 5 v room full 0.001 0.1 1 0.1 1 a negative supply current i- room full - 0.001 - 0.1 - 1 - 0.1 - 1 ground current i gnd room full - 0.001 - 0.1 - 1 - 0.1 - 1
www.vishay.com 6 document number: 69904 s11-1066-rev. c, 30-may-11 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. v in = input voltage to perform proper function. b. room = 25 c, full = as determin ed by the operating temperature suffix. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. e. guaranteed by design, not subject to production test. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications for unipolar supplies (v + = + 3 v, v - = 0 v) parameter symbol test conditions unless otherwise specified v+ = + 3 v, v- = 0 v v in = 1.4 v, 0.6 v a temp. b typ. c - 40 c to 125 c - 40 c to 85 c unit min. d max. d min. d max. d analog switch analog signal range e v analog full 0303v on-resistance r on i s = 1 ma, v d = + 1.5 v room full 195 235 300 235 280 ? switch off leakage current i s(off) v + = 3.3 v, v- = 0 v v d = 3 v/0.3 v v s = 0.3 v/3 v room full 0.02 - 0.1 - 2 0.1 2 - 0.1 - 0.25 0.1 0.25 na i d(off) room full 0.02 - 0.1 - 2 0.1 2 - 0.1 - 0.25 0.1 0.25 switch on leakage current i d(on) v + = 3.3 v, v- = 0 v v d = v s = 0.3 v/3 v room full 0.02 - 0.1 - 6 0.1 6 - 0.1 - 0.25 0.1 0.25 digital control input current, v in low i il v in under test = 0.6 v full 0.005 - 0.1 0.1 - 0.1 0.1 a input current, v in high i ih v in under test = 1.4 v full 0.005 - 0.1 0.1 - 0.1 0.1 input capacitance e c in f = 1 mhz room 2 pf dynamic characteristics tu r n - o n t i m e t on r l = 300 ? , c l = 35 pf v s = 2 v, see figure 1 room full 87 125 180 125 170 ns turn-off time t off room full 33 55 65 55 60 break-before-make time delay t bbm dg613 only, v s = 2 v r l = 300 ? , c l = 35 pf room full 60 10 10 charge injection e q v g = 0 v, r g = 0 ? , c l = 1 nf room 2.3 pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 10 mhz room - 60 db channel-to-channel crosstalk e x ta l k room - 90 3 db bandwidth e bw r l = 50 ? , c l = 5 pf room 550 mhz source off capacitance e c s(off) f = 1 mhz; v s = 0 v room 5 pf drain off capacitance e c d(off) room 6 drain on capacitance e c d(on) f = 1 mhz; v s = v d = 0 v room 9 power supplies power supply current i+ v in = 0 v or 3 v room full 0.001 0.1 1 0.1 1 a negative supply current i- room full - 0.001 - 0.1 - 1 - 0.1 - 1 ground current i gnd room full - 0.001 - 0.1 - 1 - 0.1 - 1
document number: 69904 s11-1066-rev. c, 30-may-11 www.vishay.com 7 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. v d (dual supply) on-resistance vs. temperature (dual supply) leakage current vs. temperature 0 50 100 150 200 250 - 8- 6- 4- 2 0 2 4 6 8 v com (v d ) - analog voltage (v) r on - on-resistance ( ? ) v = 2.7 v v = 5 v v = 6.2 v 0 20 40 60 80 100 120 140 160 180 200 - 8- 6- 4- 202468 v com (v d ) - analog voltage (v) r on - on-resistance ( ? ) + 125 c + 85 c + 25 c - 40 c 1 10 100 1000 10 000 temperature (c) leakage current (pa) - 40 - 20 0 20 40 60 80 100 120 i d (off) v+ = 6.2 v v- = - 6.2 v i s (off) i d (on) on-resistance vs. v d (single supply) on-resistance vs. temperature (single supply) leakage current vs. temperature 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 v com (v d ) - analog voltage (v) r on - on-resistance ( ? ) v+ = 2.7 v v+ = 3 v v+ = 5 v v+ = 13.2 v 0 20 40 60 80 100 120 140 160 180 200 02468101214 v com (v d ) - analog voltage (v) r on - on-resistance ( ? ) + 125 c + 85 c + 25 c - 40 c 1 10 100 1000 10 000 temperature (c) leakage current (pa) - 40 - 20 0 20 40 60 80 100 120 i s (off) i d (on) i d (off) v+ = 13.2 v v- = 0 v
www.vishay.com 8 document number: 69904 s11-1066-rev. c, 30-may-11 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) charge injection vs. analog voltage switching time vs. temperature (single supply) switching threshold vs. supply voltage 0.0 0.5 1.0 1.5 2.0 2.5 - 6 - 4 - 2 0 2 4 6 analog voltage (v) q - charge injection (pc) c l = 1nf v+ = 3 v v+ = 5 v v = 5 v 0 20 40 60 80 100 120 140 160 180 200 temperature (c) t on , t off - switching time (ns) - 40 - 20 0 20 40 60 80 100 120 t on v+ = 3 v t on v+ = 5 v t off v+ = 5 v t off v+ = 3 v v in - switching threshold (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 02468101214 - 40 c to + 125 c switching time vs. temperature (dual supply) insertion loss, off-isolation, crosstalk vs. frequency supply current vs. switching frequency 0 5 10 15 20 25 30 35 40 45 temperature (c) t on , t off - switching time (ns) - 40 - 20 0 20 40 60 80 100 120 t off v = 5 v t on v = 5 v - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 100k 1m 10m 100m 1g frequency (hz) loss, oirr, x talk (db) v+ = 5.0 v v- = - 5.0 v r l = 50 ? loss oirr x talk 10 pa 100 pa 1 na 10 na 100 na 1 a 10 a 100 a 1 ma 10 ma 10 100 1k 10k 100k 1m 10m switching frequency (hz) supply current i gnd i+ i- v+ = 5 v v- = - 5 v
document number: 69904 s11-1066-rev. c, 30-may-11 www.vishay.com 9 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits figure 1. switching time 0 v logic input switch input* 3 v 50 % 0 v v s t r < 5 ns t f < 5 ns 90 % t off t on v o note: logic input waveform is inverted for switches that have the opposite logic sense control c l (includes fixture and stray capacitance) v+ in r l r l + r ds(on) v o = v s s d - 5 v v o gnd c l 35 pf v- r l 300 ? + 5 v 90 % v s figure 2. break-before-make (dg613a) 0 v logic input switch switch output 3 v 50 % 0 v output 0 v 90 % v o2 v o1 90 % v s1 v s2 t d t d v o2 c l (includes fixture and stray capacitance) v+ s 2 v- s 1 v s2 in 2 d 2 v s1 r l2 300 ? d 1 v o1 c l2 35 pf -5 v gnd + 5 v r l1 300 ? c l1 35 pf in 1 figure 3. charge injection c l 1 nf d r g v o v+ s v- 3 v in v g - 5 v gnd + 5 v off on off off on off v o ? v o in x in x q = ? v o x c l
www.vishay.com 10 document number: 69904 s11-1066-rev. c, 30-may-11 vishay siliconix dg611a, dg612a, dg613a this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69904 . figure 4. crosstalk 0 v, 2.4 v s 1 x talk isolation = 20 log v o v s d 2 c = rf bypass r l d 1 s 2 v s 0 v, 2.4 v in 1 50 ? v o in 2 r g = 50 ? v+ - 5 v gnd v - nc c + 5 v c figure 5. off-isolation r l 50 ? d 0 v, 2.4 v v+ r g = 50 ? - 5 v gnd v- c v s off isolation = 20 log v o v s in v o + 5 v s c c = rf bypass figure 6. source/drain capacitances d in s v+ -5 v gnd v - c 0 v, 2.4 v meter hp4192a impedance analyzer or equivalent + 5 v c
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
vishay siliconix package information document number: 74323 14-aug-06 www.vishay.com 1 mini qfn-16l dim millimeters inches min. nam max. min. nam max. a 0.70 0.75 0.80 0.0275 0.0295 0.0315 a1 0 - 0.05 0 - 0.002 b 0.15 0.20 0.25 0.0059 0.0078 0.0098 c 0.15 0.20 0.25 0.0059 0.0078 0.0098 d 2.60 bsc 0.1023 bsc e 1.80 bsc 0.0708 bsc e 0.40 bsc 0.0157 bsc l 0.35 0.40 0.45 0.0137 0.0157 0.0177 l1 0.45 0.50 0.55 0.0177 0.0196 0.0216 ecn t-06380-rev. a, 14-aug-06 dwg: 5954 back side v ie w d e (2) (1) (16) (15) (14) (13) a c b e l a1 (4) (3) (5) (6) (7) ( 8 ) (9) (12) (11) (10) (10) (9) (12) (11) (3) (2) (1) (4) (16) (15) (14) (13) (5) (6) (7) ( 8 ) l1
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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